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| STL150N3LLH6 N-channel 30 V, 0.0016 , 33 A PowerFLATTM (6x5) STripFETTM VI DeepGATETM Power MOSFET Features Type STL150N3LLH6 VDSS 30 V RDS(on) max 0.0024 ID 33 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLATTM ( 6x5 ) Application Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST's proprietary STripFETTM technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Marking 150N3LLH6 Package PowerFLATTM (6x5) Packaging Tape and reel Order code STL150N3LLH6 September 2009 Doc ID 15345 Rev 2 1/12 www.st.com 12 Contents STL150N3LLH6 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 15345 Rev 2 STL150N3LLH6 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID(1) ID (1) ID(2) ID (2) (3) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Total dissipation at TC = 25 C Derating factor Value 30 20 150 93 33 20.8 132 80 4 0.03 -55 to 150 Unit V V A A A A A W W W/C C IDM PTOT (1) PTOT (3) TJ Tstg Operating junction temperature Storage temperature 1. The value is rated according Rthj-c 2. The value is rated according Rthj-pcb 3. Pulse width limited by safe operating area Table 3. Symbol Rthj-case Rthj-pcb (1) Thermal resistance Parameter Thermal resistance junction-case (drain) (steady state) Thermal resistance junction-ambient Value 1.56 31.3 Unit C/W C/W 1. When mounted on FR-4 board of 1inch, 2oz Cu, t < 10 sec Table 4. Symbol IAV EAS Avalanche data Parameter Not-repetitive avalanche current, (pulse width limited by Tj Max) Single pulse avalanche energy (starting TJ = 25 C, ID = IAV ) Value 20 200 Unit A mJ Doc ID 15345 Rev 2 3/12 Electrical characteristics STL150N3LLH6 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125 C VGS = 20 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 16.5 A VGS= 4.5 V, ID= 16.5 A 1 0.0016 0.0025 0.0024 0.0035 Min. 30 1 10 100 Typ. Max. Unit V A A nA V Table 6. Symbol Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions Min. Typ. 4040 740 425 40 16.3 15.8 1.4 Max. Unit pF pF pF nC nC nC VDS = 25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 33 A VGS =4.5 V (see Figure 14) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain - - - - - - 4/12 Doc ID 15345 Rev 2 STL150N3LLH6 Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=15 V, ID= 16.5 A, RG=4.7 , VGS=10 V (see Figure 13) Min. Typ. 17 18 75 46 Max. Unit ns ns ns ns - - Table 8. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 33 A, VGS=0 ISD = 33 A, di/dt = 100 A/s, VDD=25 V Test conditions Min. 34 35 2.1 Typ. Max. 33 132 1.1 Unit A A V ns nC A trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% Doc ID 15345 Rev 2 5/12 Electrical characteristics STL150N3LLH6 2.1 Figure 2. ID (A) 100 Electrical characteristics (curves) Safe operating area AM04953v1 Operation in this area is Limited by max RDS(on) Figure 3. Thermal impedance Tj=150C Tc=25C Sinlge pulse 10 1 10ms 100ms 1s 0.1 0.01 0.1 1 10 VDS(V) Figure 4. ID (A) 350 300 Output characteristics AM03998v1 Figure 5. ID (A) 300 Transfer characteristics AM03999v1 VGS=10V VDS=1V 5V 250 200 150 100 3V 50 0 0 2 4 VDS(V) 4V 250 200 150 100 50 0 0 2 4 6 8 10 VGS(V) Figure 6. BVDSS (norm) 1.06 Normalized BVDSS vs temperature AM04903v1 Figure 7. RDS(on) (m) 4.5 4.0 3.5 3.0 2.5 Static drain-source on resistance AM04905v1 VGS=10V ID=250A 1.04 1.02 1.00 0.98 0.96 0.94 -50 150 TJ(C) 2.0 1.5 1.0 0.5 0 50 100 0.0 0 20 40 60 80 ID(A) 6/12 Doc ID 15345 Rev 2 STL150N3LLH6 Figure 8. VGS (V) 12 10 8 6 4 1600 2 Crss 0 0 20 40 60 80 100 Qg(nC) 100 0 5 10 4600 Electrical characteristics Capacitance variations AM00893v1 Gate charge vs gate-source voltage Figure 9. AM04000v1 VDD=15V ID=80A C (pF) f=1MHz 6100 Ciss 3100 Coss 15 20 25 VDS(V) Figure 10. VGS(th) (norm) 1.1 1.0 0.8 0.6 0.4 Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature AM04901v1 ID=250A RDS(on) (norm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 AM04902v1 ID=40A VGS=10V 0.2 -50 0 50 100 150 TJ(C) 0.2 0 -50 -25 0 25 50 75 100 TJ(C) Figure 12. Source-drain diode forward characteristics VSD (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0 20 40 60 80 ISD(A) TJ=25C TJ=175C AM04906v1 TJ=-50C Doc ID 15345 Rev 2 7/12 Test circuits STL150N3LLH6 3 Test circuits Figure 14. Gate charge test circuit VDD 12V 2200 Figure 13. Switching times test circuit for resistive load 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform V(BR)DSS VD Figure 18. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 8/12 Doc ID 15345 Rev 2 STL150N3LLH6 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15345 Rev 2 9/12 Package mechanical data STL150N3LLH6 PowerFLATTM(6x5) mechanical data mm. Min. 0.80 Typ. 0.83 0.02 0.20 0.35 0.40 5.00 4.75 4.15 4.20 6.00 5.75 3.43 2.58 3.48 2.63 1.27 0.70 0.80 0.90 0.027 3.53 2.68 0.135 4.25 0.163 0.47 0.013 Max. 0.93 0.05 Min. 0.031 inch Typ. 0.32 0.0007 0.007 0.015 0.196 0.187 0.165 0.236 0.226 0.137 0.103 0.050 0.031 0.035 0.139 0.105 0.167 0.018 Max. 0.036 0.0019 DIM. A A1 A3 b D D1 D2 E E1 E2 E4 e L 10/12 Doc ID 15345 Rev 2 STL150N3LLH6 Revision history 5 Revision history Table 9. Date 21-Jan-2009 08-Sep-2009 Document revision history Revision 1 2 First release Document status promoted from preliminary data to datasheet Changes Doc ID 15345 Rev 2 11/12 STL150N3LLH6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 15345 Rev 2 |
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